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vishay semiconductors vlmo/s/y21.. document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 1 standard mini smd led description the new miniled series has been designed in a small white smt package. the feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. the miniled is an obvious solution for small-scale, high- power products that are expected to work reliably in an arduous environment. this is often the case in automotive and industrial application of course. product group and package data ? product group: led ? package: smd miniled ? product series: standard ? angle of half intensity: 60 features ? smd leds with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? ir reflow soldering ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? low power consumption ? luminous intensity ratio in one packaging unit i vmax /i vmin 2.0, optional 1.6 ? preconditioning acc. to jedec level 2a ? lead (pb)-free device ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use 19226 e3 parts table part color, luminous intensity technology vlms2100-gs08 red, i v = 7.1 mcd gaasp on gap vlms21h2k1-gs08 red, i v = (3.55 to 9) mcd gaasp on gap vlms21j2l1-gs08 red, i v = (5.6 to 14) mcd gaasp on gap vlms21h2l1-gs08 red, i v = (3.55 to 14) mcd gaasp on gap vlmo2100-gs08 soft orange, i v = 7.1 mcd gaasp on gap VLMO21H2K1-GS08 soft orange, i v = (3.55 to 9) mcd gaasp on gap vlmo21j2l1-gs08 soft orange, i v = (5.6 to 14) mcd gaasp on gap vlmo21h2l1-gs08 soft orange, i v = (3.55 to 14) mcd gaasp on gap vlmy2100-gs08 ye l l o w, i v = 7.1 mcd gaasp on gap vlmy21h2k1-gs08 ye l l o w, i v = (3.55 to 9) mcd gaasp on gap vlmy21j2l1-gs08 ye l l o w, i v = (5.6 to 14) mcd gaasp on gap vlmy21h2l1-gs08 ye l l o w, i v = (3.55 to 14) mcd gaasp on gap
www.vishay.com 2 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. note: 1) t amb = 25 c, unless otherwise specified 2) driving the led in reverse direction is suitable for a short term application note: 1) t amb = 25 c unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 note: 1) t amb = 25 c unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 absolute maximum ratings 1) vlms21.., vlmo21.., vlmy21.. parameter test condition symbol value unit reverse voltage 2) v r 6v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 0.5 a power dissipation p v 95 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 5 mm 2 ) r thja 480 k/w optical and electrical characteristics 1) vlms21.., red parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma vlms2100 i v 2.8 7.1 mcd i f = 10 ma vlms21h2k1 i v 3.55 9 mcd i f = 10 ma vlms21j2l1 i v 5.6 14 mcd i f = 10 ma vlms21h2l1 i v 3.55 14 mcd dominant wavelength i f = 10 ma d 624 628 636 nm peak wavelength i f = 10 ma p 640 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.1 3.0 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf optical and electrical characteristics 1) vlmo21.., soft orange parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma vlmo2100 i v 3.55 7.1 mcd i f = 10 ma vlmo21h2k1 i v 3.55 9 mcd i f = 10 ma vlmo21j2l1 i v 5.6 14 mcd i f = 10 ma vlmo2h2l1 i v 3.55 14 mcd dominant wavelength i f = 10 ma d 598 605 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.1 3 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf
document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 3 vishay semiconductors vlmo/s/y21.. note: 1) t amb = 25 c unless otherwise specified 2) in one packing unit i vmax /i vmin 2.0 note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixing of two groups on each reel). in order to ensure availability, si ngle brightness groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. in order to ensure availability, single wavelength groups will not be orderable. note: wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nm. optical and electrical characteristics 1) vlmy21.., yellow parameter test condition part symbol min typ. max unit luminous intensity 2) i f = 10 ma vlmy2100 i v 3.55 7.1 mcd i f = 10 ma vlmy21h2k1 i v 3.55 9 mcd i f = 10 ma vlmy21j2l1 i v 5.6 14 mcd i f = 10 ma vlmy21h2l1 i v 3.55 14 mcd dominant wavelength i f = 10 ma d 581 588 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 2.2 3 v reverse voltage i r = 10 a v r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf luminous intensity classification group light intensity (mcd) standard optional min max h 1 2.8 3.55 2 3.55 4.5 j 1 4.5 5.6 2 5.6 7.1 k 1 7.1 9.0 2 9.0 11.2 l 1 11.2 14.0 2 14.0 18.0 m 1 18.0 22.4 2 22.4 28.0 n 1 28.0 35.5 2 35.5 45.0 crossing table vishay osram vlms2100 lsm670 vlms21h2k1 lsm670-h2k1 vlms21j2l1 lsm670-j2l1 vlms21h2l1 lsm670-h2l1 vlmo2100 lom670 vlmo21h2k1 lom670-h2k1 vlmo21j2l1 lom670-j2l1 vlmo2h2l1 lom670-h2l1 vlmy2100 lym670 vlmy21h2k1 lym670-h2k1 vlmy21j2l1 lym670-j2l1 vlmy21h2l1 lym670-h2l1 color classification group yellow soft orange dom. wavelength (nm) min. max. min. max. 1 581 584 598 601 2 583 586 600 603 3 585 588 602 605 4 587 590 604 607 5 589 592 606 609 6 591 594 608 611
www.vishay.com 4 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs. ambient temperature figure 2. rel. luminous intensity vs. angular displacement figure 3. forward current vs. forward voltage 19902 0 0 10203040506070 8 0 90 100 5 10 15 20 25 30 35 40 red, soft orange, yello w i f - for w ard c u rrent (ma) t am b - am b ient temperat u re (c) 19903 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0.1 1 10 100 0 v f - for w ard v oltage ( v ) 16634 f i - for w ard c u rrent (ma) s u per-red 5 4 3 2 1 figure 4. relative luminous intensity vs. forward current figure 5. rel. luminous intensity vs. ambient temperature figure 6. relative intensity vs. wavelength 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) 1663 8 i v rel - relati v e l u mino u s intensity s u per red 0.0 0.4 0. 8 1.2 1.6 2.0 0 204060 8 0 100 t am b - am b ient temperat u re (c) 16635 i v rel - relati v e l u mino u s intensity s u per red 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 550 590 630 670 710 750 16639 i v rel - relati v e l u mino u s intensity - w a v elength (nm) s u per-red
document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 5 vishay semiconductors vlmo/s/y21.. figure 7. forward current vs. forward voltage figure 8. relative luminous intensity vs. forward current figure 9. rel. luminous intensity vs. ambient temperature 0.1 1 10 100 95 9990 i- for w ard c u rrent (ma) f soft orange v f - for w ard v oltage ( v ) 5 4 3 2 1 0 0.01 0.1 1 10 100 1 10 i f - for w ard c u rrent (ma) 95 9997 i - relati v e l u mino u s intensity v rel soft orange 95 9994 soft orange 0 0.4 0. 8 1.2 1.6 2.0 100 i v rel - relati v e l u mino u s intensity t am b - am b ient temperat u re (c) 0204060 8 0 figure 10. relative intensity vs. wavelength figure 11. forward current vs. forward voltage figure 12. relative luminous intensity vs. forward current 95 10324 soft orange 570 590 610 630 650 0 0.2 0.4 0.6 0. 8 1.2 670 - w a v elength (nm) 1.0 i - relati v e l u mino u s intensity v rel yello w 0.1 1 10 100 95 99 8 7 v f - for w ard v oltage ( v ) i- for w ard c u rrent (ma) f 5 2 1 034 yello w i f - for w ard c u rren t (ma) 100 0.01 0.1 1 10 95 9999 i- relati v e l u mino u s intensity v rel 10 1
www.vishay.com 6 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. soldering profile figure 13. rel. luminous intens ity vs. ambient temperature figure 14. relative intensity vs. wavelength yello w 0 0.4 0. 8 1.6 1.2 2.0 95 9992 i- relati v el u mino u s intensity v rel t am b - am b ient temperat u re (c) 20 40 60 8 0 0 100 550 570 590 610 630 0 0.2 0.4 0.6 0. 8 1.2 650 95 10039 - w a v elength (nm) 1.0 yello w i v rel - relati v e l u mino u s intensity figure 15. pulse forward current vs. pulse duration 0.01 0.1 1 10 1 10 100 1000 10000 t p - p u lse length (ms) 100 95 99 8 5 i - for w ard c u rrent (ma) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t am b < 60 c figure 16. vishay leadfree reflow soldering profile (acc. to j-std-020b) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c
document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 7 vishay semiconductors vlmo/s/y21.. package dimensions in millimeters 16 8 92
www.vishay.com 8 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. reel dimensions in millimeters 1693 8
document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 9 vishay semiconductors vlmo/s/y21.. tape dimensions in millimeters leader and trailer dimensions in millimeters gs08 = 3000 pcs 16939 trailer leader no de v ices no de v ices min. 200 min. 400 start end de v ices 96 11 8 1 8
www.vishay.com 10 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. bar code product label a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: h2 = bode for luminous intensity group 3 = bode for color group d) date code year/week e) day code (e.g. 2: tuesday) f) batch no. g) total quantity h) company code 106 37 v ishay a h b c d e f g 19904
vishay semiconductors vlmo/s/y21.. document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 11 cover tape peel strength according to din en 60286-3 0.1 to 1.3 n 300 10 mm/min 165 - 180 peel angle label standard bar code labels for finished goods the standard bar code labels are product labels and used for identification of goods. the finished goods are packed in final packing area. the standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. the labels are on each packing unit and contain vishay semiconductor gmbh specific data. vishay semiconductor gmbh standard bar code product label (finished goods) plain writting abbreviation length item-description - 18 item-number ino 8 selection-code sel 3 lot-/serial-number batch 10 data-code cod 3 (yww) plant-code ptc 2 quantity qty 8 accepted by: acc - packed by: pck - mixed code indicator mixed code - origin xxxxxxx + company logo long bar code top type length item-number n 8 plant-code n 2 sequence-number x 3 quantity n 8 total length - 21 short bar code bottom type length selection-code x 3 data-code n 3 batch-number x 10 filter - 1 total length - 17
www.vishay.com 12 document number 81233 rev. 1.1, 30-aug-07 vishay semiconductors vlmo/s/y21.. dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moisture absorpt ion, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/ nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard j esd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
vishay semiconductors vlmo/s/y21.. document number 81233 rev. 1.1, 30-aug-07 www.vishay.com 13 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into t he atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (199 0) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its polic y of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semico nductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make c hanges to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or i ndirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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